{"ok":true,"nota":{"id":"aba9603d2cdb6d52","slug":"cambiar-la-forma-en-que-crecen-las-capas-de-germanio-y-manganeso-permi-aba960","titulo":"Cambiar la forma en que crecen las capas de germanio y manganeso permite regular su comportamiento eléctrico y","resumen":"Los investigadores modificaron la superficie sobre la que crecen capas delgadas de germanio y manganeso. Así lograron controlar la forma de unas inclusiones magnéticas y, con eso, cómo conducen la electricidad.","fuente":"hal","fuenteNombre":"HAL · Ciencia abierta","color":"#b06000","autor":"Yu, Ing-Song, Jamet, M., Devillers, T.","url":"https://hal.science/hal-00999603","imagen":"/hoy/portada/aba9603d2cdb6d52","tema":"ciencia","subtemas":["materiales magnéticos","semiconductores","nanoestructuras","electrónica de espín"],"entidades":["germanio","manganeso"],"formato":"dato","entretenimiento":false,"pubTs":"2026-10-24T00:00:00.000Z","indexTs":"2026-10-27T00:12:40.144Z","hash":"651c7a7b19b2b76016881952aec0e73e478d6477ab796052dbe8bff03fa56542","tsa":{"time":"Oct 27 00:14:20 2026 GMT","provider":"freetsa.org","sobre":"sello"},"stats":{"views":0,"likes":0,"clicks":0,"dwell":0},"tipo":"normal","registro":"hallazgo","porQueImporta":"Con sustratos y preparaciones distintas obtuvieron capas con nanocolumnas o con esferas, y cada forma cambia cómo responde el material a un campo magnético. Es una pista para fabricar componentes electrónicos más pequeños y ajustables. Todavía es investigación de laboratorio: la fabricación a escala industrial queda lejos.","quienFirma":"HAL (ciencia abierta, sin institución principal identificada)","confianza":"preprint","consulta":null},"sello":{"hash":"651c7a7b19b2b76016881952aec0e73e478d6477ab796052dbe8bff03fa56542","sello":"5b332e856f4bf049367742ba8292c2381147f9712a28934b3ea68b85cfda610b","beacon":{"drand":{"cadena":"8990e7a9aaed2ffed73dbd7092123d6f289930540d7651336225dc172e51b2ce","ronda":6587634,"aleatorio":"f8f7bb052e8e2d414e91ed8ac841e0f9ce80e288f0378058b86777ea61b7bc69","tiempo":"2026-10-27T00:14:00.000Z"},"nist":{"cadena":2,"pulso":2001010,"salida":"32F14C4C6ACF687C9FBBF1776EDA8AE339061092EFC4DAFFE514324F063E8D0858C3B5933209ADBD2BDFB12A9DA35176684458F1442896121CF7198303E62979","tiempo":"2026-10-27T00:13:00.000Z"},"noAntes":"2026-10-27T00:14:00.000Z"},"verificacion":{"drand":true,"nist":true},"tsa":{"time":"Oct 27 00:14:20 2026 GMT","provider":"freetsa.org","sobre":"sello"},"original":{"titulo":"Spinodal decomposition to control magnetotransport in (Ge,Mn) films","descripcion":"Changing the morphology of the growing surface and the nature of residual impurities in (Ge,Mn) layers dramatically changes nanospinodal decomposition, i.e., the morphology of ferromagnetic Mn-rich inclusions. By this way, we are able to control the magnetotransport properties of (Ge,Mn) films. By using different substrates and substrate preparation, we have indeed obtained p -type layers with nanocolumns, either parallel or entangled, and n -type layers with spherical clusters. Holes exhibit an anomalous Hall effect and electrons exhibit a tunneling magnetoresistance, both with a clear dependence on the magnetization of the Mn-rich inclusions; holes exhibit orbital MR and electrons show only the normal Hall effect, and an additional component of magnetoresistance due to weak localization, all three being independent of the magnetic state of the Mn-rich inclusions. Identified mechanisms ","pubDate":"2026-10-24","url":"https://hal.science/hal-00999603"},"indexado":"2026-10-27T00:12:40.144Z"}}