{"ok":true,"nota":{"id":"731162e78d129e2c","slug":"logran-un-material-semiconductor-record-que-podria-reemplazar-al-silic-731162","titulo":"Logran un material semiconductor récord que podría reemplazar al silicio en electrónica de alta tensión","resumen":"Un equipo liderado por Darrell Schlom, de la Universidad de Cornell, agregó silicio a finas capas de óxido de aluminio y galio. Lograron mantener el control de la conducción eléctrica con una brecha de banda más ancha que la de cualquier semiconductor previo.","fuente":"phys","fuenteNombre":"Phys.org","color":"#2b5c8a","autor":"","url":"https://phys.org/news/2026-10-sapphire-grown-semiconductor-bandgap.html","imagen":"https://scx1.b-cdn.net/csz/news/tmb/2026/semiconductor-film-set.jpg","tema":"tecnologia","subtemas":["semiconductores","electronica de potencia","materiales","eficiencia energetica","silicio"],"entidades":["Darrell Schlom","Universidad de Cornell","Nature"],"formato":"dato","entretenimiento":false,"pubTs":"2026-10-22T11:00:04.000Z","indexTs":"2026-10-22T11:02:00.691Z","hash":"1123b46d0a1e132b5627b55bb3ec6731b899b2cd41ed04df9541c2ee9e288f1b","tsa":{"time":"Oct 22 11:02:31 2026 GMT","provider":"freetsa.org","sobre":"sello"},"stats":{"views":0,"likes":0,"clicks":0,"dwell":0},"tipo":"normal","registro":"hallazgo","porQueImporta":"Un semiconductor que maneja voltajes mucho más altos permite fabricar aparatos más chicos y eficientes, desde cargadores hasta equipos de red. Hoy esos componentes limitan cuánta potencia puede soportar un dispositivo sin calentarse o romperse. Si el material llega a producirse a escala, la electrónica de la próxima década podría ser más compacta y gastar menos energía. Todavía falta mucho para que eso llegue a una tienda, y ese camino suele ser más largo de lo que los anuncios sugieren.","quienFirma":"Cornell University","confianza":"revisado","consulta":null},"sello":{"hash":"1123b46d0a1e132b5627b55bb3ec6731b899b2cd41ed04df9541c2ee9e288f1b","sello":"09e2d8c8ba3c96915fa661800a04e3f6518096cd3cd82e37cdbf3ec24066c27e","beacon":{"drand":{"cadena":"8990e7a9aaed2ffed73dbd7092123d6f289930540d7651336225dc172e51b2ce","ronda":6574530,"aleatorio":"77c0ff69d9c945e5a0fedc72925c360aed6704637d961d8fbdf10775cfb4c370","tiempo":"2026-10-22T11:02:00.000Z"},"nist":{"cadena":2,"pulso":1994464,"salida":"08DB706B4B1BB15E604CC4503D6078974BE6B5923DFB13C770D3888ED0E42B58087CDAD257921C441B5184970D253CA31B017EDC2E10ACC5A415CB86ABBC6619","tiempo":"2026-10-22T11:01:00.000Z"},"noAntes":"2026-10-22T11:02:00.000Z"},"verificacion":{"drand":true,"nist":true},"tsa":{"time":"Oct 22 11:02:31 2026 GMT","provider":"freetsa.org","sobre":"sello"},"original":{"titulo":"Sapphire-grown semiconductor film sets bandgap record","descripcion":"Semiconductors with wider bandgaps could pave the way for smaller, more efficient electronics that can handle far higher voltages, but the wider this gap becomes, the harder it is to control how well a material conducts electricity. Now, a team led by Darrell Schlom at Cornell University has shown that adding silicon to thin films of aluminum gallium oxide can keep this control intact at bandgaps wider than any semiconductor before it. Their research has been published in Nature.","pubDate":"Thu, 22 Oct 2026 07:00:04 EDT","url":"https://phys.org/news/2026-10-sapphire-grown-semiconductor-bandgap.html"},"indexado":"2026-10-22T11:02:00.691Z"}}