{"ok":true,"nota":{"id":"2a11e561691e427b","slug":"consiguen-ver-por-primera-vez-la-union-interna-de-cables-microscopicos-2a11e5","titulo":"Consiguen ver por primera vez la unión interna de cables microscópicos de GaN","resumen":"Científicos fabricaron cables de nitruro de galio con capas concéntricas y usaron haces de electrones para mapear la unión entre zonas con carga positiva y negativa. Observaron cómo se activa el dopante magnesio según las condiciones del haz.","fuente":"hal","fuenteNombre":"HAL · Ciencia abierta","color":"#b06000","autor":"Tchoulfian, Pierre, Donatini, Fabrice, Levy, François","url":"https://hal.science/hal-00999730","imagen":"/hoy/portada/2a11e561691e427b","tema":"ciencia","subtemas":["nanotecnología","semiconductores","led","microscopía electrónica","materiales"],"entidades":["nitruro de galio","HAL"],"formato":"dato","entretenimiento":false,"pubTs":"2026-10-23T00:00:00.000Z","indexTs":"2026-10-23T22:31:31.924Z","hash":"517fe41685eecc918b8d6908387d0230b9b102cc795ad79cf7f46878d9a93eb0","tsa":{"time":"Oct 23 22:32:22 2026 GMT","provider":"freetsa.org","sobre":"sello"},"stats":{"views":0,"likes":0,"clicks":0,"dwell":0},"tipo":"normal","registro":"hallazgo","porQueImporta":"Estos cables diminutos sirven para hacer LEDs y sensores más eficientes, pero hasta ahora no se sabía bien qué pasaba dentro de su estructura en tres dimensiones. Tener una imagen directa permite corregir la fabricación antes de llegar a productos comerciales. Para un usuario común, esto se traduce en pantallas y luces que dependen de estos materiales. El límite es que el estudio analiza muestras de laboratorio, no dispositivos ya armados.","quienFirma":"HAL (repositorio de ciencia abierta, con grupos de investigación franceses)","confianza":"revisado","consulta":null},"sello":{"hash":"517fe41685eecc918b8d6908387d0230b9b102cc795ad79cf7f46878d9a93eb0","sello":"fa2f2cf1fb8c64e53706f70670130cdacaf6c75e033a05688241a49656740d03","beacon":{"drand":{"cadena":"8990e7a9aaed2ffed73dbd7092123d6f289930540d7651336225dc172e51b2ce","ronda":6578790,"aleatorio":"c4d4738914627cb599c4c0726095d0ca65d7e18b339aad7019f74f0cf22914d9","tiempo":"2026-10-23T22:32:00.000Z"},"nist":{"cadena":2,"pulso":1996588,"salida":"1AB33E4D4D8827C21F7F3557C5995F2A7803790AA889B11FBC3E8A1AAE593D51C4D6AF8D679624359D1D1868187DF78129DBF70BD659B8A94EB4847855F1EB6E","tiempo":"2026-10-23T22:31:00.000Z"},"noAntes":"2026-10-23T22:32:00.000Z"},"verificacion":{"drand":true,"nist":true},"tsa":{"time":"Oct 23 22:32:22 2026 GMT","provider":"freetsa.org","sobre":"sello"},"original":{"titulo":"Direct Imaging of p-n Junction in Core-Shell GaN Wires","descripcion":"While core-shell wire-based devices offer a promising path toward improved optoelectronic applications, their development is hampered by the present uncertainty about essential semiconductor properties along the three-dimensional (3D) buried p-n junction. Thanks to a cross-sectional approach, scanning electron beam probing techniques were employed here to obtain a nanoscale spatially resolved analysis of GaN core-shell wire p-n junctions grown by catalyst-free metal-organic vapor phase epitaxy on GaN and Si substrates. Both electron beam induced current (EBIC) and secondary electron voltage constrast (VC) were demonstrated to delineate the radial and axial junction existing in the 3D structure. The Mg dopant activation process in p-GaN shell was dynamically controlled by the ebeam exposure conditions and visualized thanks to EBIC mapping. EBIC measurements were shown to yield local minor","pubDate":"2026-10-23","url":"https://hal.science/hal-00999730"},"indexado":"2026-10-23T22:31:31.924Z"}}